Light emission properties of GaN-based laser diode structures

Polish Academy of Sciences
Publication Type:
Journal Article
ACTA Physica Polonica, 2005, 108 (4), pp. 675 - 680
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Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
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