Issue Date | Title | Author(s) |
2004-05-31 | Doping-level-dependent optical properties of GaN:Mn | Gelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M |
2015-08-11 | Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods | Anantachaisilp, S; Smith, SM; Ton-That, C; Pornsuwan, S; Moon, AR; Nenstiel, C; Hoffmann, A; Phillips, MR |
2003-12-01 | Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN | Gelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A |
2011-02-07 | Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements | Callsen, G; Reparaz, JS; Wagner, MR; Kirste, R; Nenstiel, C; Hoffmann, A; Phillips, MR |
2006-10-12 | Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments | Malguth, E; Hoffmann, A; Gehlhoff, W; Gelhausen, O; Phillips, MR; Xu, X |
2006-05-16 | Fe-centers in GaN as candidates for spintronics applications | Mnlguth, E; Hoffmann, A; Phillips, M; Gehlhoff, W |
2012-09-01 | Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications | Roczen, M; Schade, M; Malguth, E; Callsen, G; Barthel, T; Gref, O; Töfflinger, JA; Schöpke, A; Schmidt, M; Leipner, HS; Ruske, F; Phillips, MR; Hoffmann, A; Korte, L; Rech, B |
2008-03-01 | Fe in III-V and II-VI semiconductors | Malguth, E; Hoffmann, A; Phillips, MR |
2004-03-01 | Identification of bound exciton complexes in ZnO | Strassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK |
2011-10-07 | Titanium-assisted growth of silica nanowires: From surface-matched to free-standing morphologies | Callsen, G; Reparaz, JS; Wagner, MR; Vierck, A; Phillips, MR; Thomsen, C; Hoffmann, A |