Doping-level-dependent optical properties of GaN:Mn

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2004, 84 (22), pp. 4514 - 4516
Issue Date:
2004-05-31
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Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al2O3substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 1020cm-3reduced the near band edge emission intensity by around one order of magnitude.
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