Doping-level-dependent optical properties of GaN:Mn

Gelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M

Doping-level-dependent optical properties of GaN:Mn

Gelhausen, O Malguth, E Phillips, MR

Goldys, EM Strassburg, M Hoffmann, A Graf, T Gjukic, M Stutzmann, M

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2004, 84 (22), pp. 4514 - 4516
Issue Date:: 2004-05-31

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Field	Value	Language
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Malguth, E	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Strassburg, M	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	Graf, T	en_US
dc.contributor.author	Gjukic, M	en_US
dc.contributor.author	Stutzmann, M	en_US
dc.date.issued	2004-05-31	en_US
dc.identifier.citation	Applied Physics Letters, 2004, 84 (22), pp. 4514 - 4516	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/408
dc.description.abstract	Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al 2O 3 substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 reduced the near band edge emission intensity by around one order of magnitude.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1757641	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Doping-level-dependent optical properties of GaN:Mn	en_US
dc.type	Journal Article
utslib.citation.volume	22	en_US
utslib.citation.volume	84	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	22	en_US
pubs.publication-status	Published	en_US
pubs.volume	84	en_US

Abstract:

Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al 2O 3 substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 reduced the near band edge emission intensity by around one order of magnitude.

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http://hdl.handle.net/10453/408