Electron-Beam-Induced Deposition as a Technique for Analysis of Precursor Molecule Diffusion Barriers and Prefactors

Cullen, J; Lobo, CJ; Ford, MJ; Toth, M

Electron-Beam-Induced Deposition as a Technique for Analysis of Precursor Molecule Diffusion Barriers and Prefactors

Cullen, J Lobo, CJ

Ford, MJ

Toth, M

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Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2015, 7 (38), pp. 21408 - 21415
Issue Date:: 2015-09-30

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Field	Value	Language
dc.contributor.author	Cullen, J	en_US
dc.contributor.author	Lobo, CJ https://orcid.org/0000-0002-2746-1363	en_US
dc.contributor.author	Ford, MJ https://orcid.org/0000-0002-8595-5900	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.available	2020-05-25T19:13:46Z
dc.date.issued	2015-09-30	en_US
dc.identifier.citation	ACS Applied Materials and Interfaces, 2015, 7 (38), pp. 21408 - 21415	en_US
dc.identifier.issn	1944-8244	en_US
dc.identifier.uri	http://hdl.handle.net/10453/37767
dc.description.abstract	© 2015 American Chemical Society. Electron-beam-induced deposition (EBID) is a direct-write chemical vapor deposition technique in which an electron beam is used for precursor dissociation. Here we show that Arrhenius analysis of the deposition rates of nanostructures grown by EBID can be used to deduce the diffusion energies and corresponding preexponential factors of EBID precursor molecules. We explain the limitations of this approach, define growth conditions needed to minimize errors, and explain why the errors increase systematically as EBID parameters diverge from ideal growth conditions. Under suitable deposition conditions, EBID can be used as a localized technique for analysis of adsorption barriers and prefactors.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation.ispartof	ACS Applied Materials and Interfaces	en_US
dc.relation.isbasedon	10.1021/acsami.5b06341	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Electron-Beam-Induced Deposition as a Technique for Analysis of Precursor Molecule Diffusion Barriers and Prefactors	en_US
dc.type	Journal Article
utslib.citation.volume	38	en_US
utslib.citation.volume	7	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/DVC (Research)
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	38	en_US
pubs.publication-status	Published	en_US
pubs.volume	7	en_US

Abstract:

© 2015 American Chemical Society. Electron-beam-induced deposition (EBID) is a direct-write chemical vapor deposition technique in which an electron beam is used for precursor dissociation. Here we show that Arrhenius analysis of the deposition rates of nanostructures grown by EBID can be used to deduce the diffusion energies and corresponding preexponential factors of EBID precursor molecules. We explain the limitations of this approach, define growth conditions needed to minimize errors, and explain why the errors increase systematically as EBID parameters diverge from ideal growth conditions. Under suitable deposition conditions, EBID can be used as a localized technique for analysis of adsorption barriers and prefactors.

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http://hdl.handle.net/10453/37767