Light-induced reflectivity transients in black-Si nanoneedles

Ščajev, P; Malinauskas, T; Seniutinas, G; Arnold, MD; Gentle, A; Aharonovich, I; Gervinskas, G; Michaux, P; Hartley, JS; Mayes, ELH; Stoddart, PR; Juodkazis, S

Light-induced reflectivity transients in black-Si nanoneedles

Ščajev, P Malinauskas, T Seniutinas, G Arnold, MD

Gentle, A

Aharonovich, I

Gervinskas, G Michaux, P Hartley, JS Mayes, ELH Stoddart, PR Juodkazis, S

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Publication Type:: Journal Article
Citation:: Solar Energy Materials and Solar Cells, 2016, 144 pp. 221 - 227
Issue Date:: 2016-01-01

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Field	Value	Language
dc.contributor.author	Ščajev, P	en_US
dc.contributor.author	Malinauskas, T	en_US
dc.contributor.author	Seniutinas, G	en_US
dc.contributor.author	Arnold, MD https://orcid.org/0000-0003-4164-0242	en_US
dc.contributor.author	Gentle, A https://orcid.org/0000-0001-8964-0722	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Gervinskas, G	en_US
dc.contributor.author	Michaux, P	en_US
dc.contributor.author	Hartley, JS	en_US
dc.contributor.author	Mayes, ELH	en_US
dc.contributor.author	Stoddart, PR	en_US
dc.contributor.author	Juodkazis, S	en_US
dc.date.available	2020-05-25T19:14:36Z
dc.date.issued	2016-01-01	en_US
dc.identifier.citation	Solar Energy Materials and Solar Cells, 2016, 144 pp. 221 - 227	en_US
dc.identifier.issn	0927-0248	en_US
dc.identifier.uri	http://hdl.handle.net/10453/37775
dc.description.abstract	© 2015 Elsevier B.V. All rights reserved. The change in reflectivity of black-Si (b-Si) upon optical excitation was measured by the pump-probe technique using picosecond laser pulses at 532 (pump) and 1064 nm (probe) wavelengths. The specular reflection from the random pattern of plasma-etched b-Si nano-needles was dominated by the photo-excited free-carrier contribution to the reflectivity. The kinetics of the reflectivity were found to be consistent with surface structural and chemical analysis, performed by scanning and transmission electron microscopy, and spectroscopic ellipsometry. The surface recombination velocity on the b-Si needles was estimated to be ~10<sup>2</sup>cm/s. Metalization of b-Si led to much faster recombination and alteration of reflectivity. The reflectivity spectra of random b-Si surfaces with different needle lengths was modeled by a multi-step refractive index profile in the Drude formalism. The dip in the reflectivity spectra and the sign reversal in the differential reflectivity signal at certain b-Si needle sizes is explained by the model.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102003
dc.relation.ispartof	Solar Energy Materials and Solar Cells	en_US
dc.relation.isbasedon	10.1016/j.solmat.2015.08.030	en_US
dc.subject.classification	Energy	en_US
dc.title	Light-induced reflectivity transients in black-Si nanoneedles	en_US
dc.type	Journal Article
utslib.citation.volume	144	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	open_access
pubs.publication-status	Published	en_US
pubs.volume	144	en_US

Abstract:

© 2015 Elsevier B.V. All rights reserved. The change in reflectivity of black-Si (b-Si) upon optical excitation was measured by the pump-probe technique using picosecond laser pulses at 532 (pump) and 1064 nm (probe) wavelengths. The specular reflection from the random pattern of plasma-etched b-Si nano-needles was dominated by the photo-excited free-carrier contribution to the reflectivity. The kinetics of the reflectivity were found to be consistent with surface structural and chemical analysis, performed by scanning and transmission electron microscopy, and spectroscopic ellipsometry. The surface recombination velocity on the b-Si needles was estimated to be ~10²cm/s. Metalization of b-Si led to much faster recombination and alteration of reflectivity. The reflectivity spectra of random b-Si surfaces with different needle lengths was modeled by a multi-step refractive index profile in the Drude formalism. The dip in the reflectivity spectra and the sign reversal in the differential reflectivity signal at certain b-Si needle sizes is explained by the model.

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http://hdl.handle.net/10453/37775