Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

Publication Type:
Journal Article
Citation:
Physical Review B - Condensed Matter and Materials Physics, 2015, 92 (2)
Issue Date:
2015-07-06
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©2015 American Physical Society. X-ray absorption near-edge spectroscopy, photoluminescence, cathodoluminescence, and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: N < inf > O < /inf > ,N < inf > Zn < /inf > , and loosely bound N < inf > 2 < /inf > molecule. The results establish a direct link between a donor-acceptor pair emission at 3.232 eV and the concentration of loosely bound N < inf > 2 < /inf > . This work confirms that N < inf > 2 < /inf > at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)10.1103/PhysRevB.87.195207]. Additionally, shallow acceptor states arising from N < inf > O < /inf > complexes have been ruled out in this paper.
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