Origin of white color light emission in ALE-grown ZnSe

Godlewski, M; Guziewicz, E; Kopalko, K; Łusakowska, E; Dynowska, E; Godlewski, MM; Goldys, EM; Phillips, MR

Origin of white color light emission in ALE-grown ZnSe

Godlewski, M Guziewicz, E Kopalko, K Łusakowska, E Dynowska, E Godlewski, MM Goldys, EM Phillips, MR

Permalink

Publication Type:: Journal Article
Citation:: Journal of Luminescence, 2003, 102-103 (SPEC), pp. 455 - 459
Issue Date:: 2003-05-01

Closed Access

	Filename	Description	Size
	2003000449.pdf		341.38 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Guziewicz, E	en_US
dc.contributor.author	Kopalko, K	en_US
dc.contributor.author	Łusakowska, E	en_US
dc.contributor.author	Dynowska, E	en_US
dc.contributor.author	Godlewski, MM	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2003-05-01	en_US
dc.identifier.citation	Journal of Luminescence, 2003, 102-103 (SPEC), pp. 455 - 459	en_US
dc.identifier.issn	0022-2313	en_US
dc.identifier.uri	http://hdl.handle.net/10453/400
dc.description.abstract	We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. © 2002 Elsevier Science B.V. All rights reserved.	en_US
dc.relation.ispartof	Journal of Luminescence	en_US
dc.relation.isbasedon	10.1016/S0022-2313(02)00597-5	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Origin of white color light emission in ALE-grown ZnSe	en_US
dc.type	Journal Article
utslib.citation.volume	SPEC	en_US
utslib.citation.volume	102-103	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
dc.location.activity	BUDAPEST, HUNGARY
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	SPEC	en_US
pubs.publication-status	Published	en_US
pubs.volume	102-103	en_US

Abstract:

We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. © 2002 Elsevier Science B.V. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/400