A method to improve the light emission efficiency of Mg-doped GaN

Gelhausen, O; Phillips, MR; Goldys, EM

A method to improve the light emission efficiency of Mg-doped GaN

Gelhausen, O Phillips, MR

Goldys, EM

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Publication Type:: Journal Article
Citation:: Journal of Physics D: Applied Physics, 2003, 36 (23), pp. 2976 - 2979
Issue Date:: 2003-12-07

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Field	Value	Language
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Goldys, EM	en_US
dc.date.issued	2003-12-07	en_US
dc.identifier.citation	Journal of Physics D: Applied Physics, 2003, 36 (23), pp. 2976 - 2979	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://hdl.handle.net/10453/411
dc.description.abstract	Scanning cathodoluminescence (CL) spectroscopy and imaging were used to study the effect of post-growth processing on the CL efficiency of metal-organic vapour phase epitaxy-grown Mg-doped GaN. In this work, two treatments, thermal annealing in high-purity gaseous atmospheres (N2, O2 and H2(5%)/N2) and low-energy electron beam irradiation (LEEBI), have been investigated. Post-growth annealing in a H2/N2 atmosphere followed by LEEBI leads to a significant enhancement of the free electron-to-bound Mg-acceptor (e, Mg) CL emission and a reduction of nonradiative centres involving native defects. The presented results demonstrate that the combination of post-growth annealing in a H2/N2 atmosphere and LEEBI dissociation of Mg-H complex acceptors significantly improves the light emitting efficiency of Mg-doped p-type GaN. Conversely, the samples annealed in a N2 or O2 atmosphere exhibit a reduced (e, Mg) emission after both annealing and LEEBI treatment.	en_US
dc.relation.ispartof	Journal of Physics D: Applied Physics	en_US
dc.relation.isbasedon	10.1088/0022-3727/36/23/018	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	A method to improve the light emission efficiency of Mg-doped GaN	en_US
dc.type	Journal Article
utslib.citation.volume	23	en_US
utslib.citation.volume	36	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	23	en_US
pubs.publication-status	Published	en_US
pubs.volume	36	en_US

Abstract:

Scanning cathodoluminescence (CL) spectroscopy and imaging were used to study the effect of post-growth processing on the CL efficiency of metal-organic vapour phase epitaxy-grown Mg-doped GaN. In this work, two treatments, thermal annealing in high-purity gaseous atmospheres (N2, O2 and H2(5%)/N2) and low-energy electron beam irradiation (LEEBI), have been investigated. Post-growth annealing in a H2/N2 atmosphere followed by LEEBI leads to a significant enhancement of the free electron-to-bound Mg-acceptor (e, Mg) CL emission and a reduction of nonradiative centres involving native defects. The presented results demonstrate that the combination of post-growth annealing in a H2/N2 atmosphere and LEEBI dissociation of Mg-H complex acceptors significantly improves the light emitting efficiency of Mg-doped p-type GaN. Conversely, the samples annealed in a N2 or O2 atmosphere exhibit a reduced (e, Mg) emission after both annealing and LEEBI treatment.

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http://hdl.handle.net/10453/411