A new, enhanced diamond single photon emitter in the near infra-red

Aharonovich, I; Zhou, C; Stacey, A; Orwa, J; Simpson, D; Greentree, AD; Treussart, F; Roch, JF; Prawer, S

A new, enhanced diamond single photon emitter in the near infra-red

Aharonovich, I

Zhou, C Stacey, A Orwa, J Simpson, D Greentree, AD Treussart, F Roch, JF Prawer, S

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Field	Value	Language
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Zhou, C	en_US
dc.contributor.author	Stacey, A	en_US
dc.contributor.author	Orwa, J	en_US
dc.contributor.author	Simpson, D	en_US
dc.contributor.author	Greentree, AD	en_US
dc.contributor.author	Treussart, F	en_US
dc.contributor.author	Roch, JF	en_US
dc.contributor.author	Prawer, S	en_US
dc.identifier.uri	http://hdl.handle.net/10453/41207
dc.description.abstract	Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.	en_US
dc.title	A new, enhanced diamond single photon emitter in the near infra-red	en_US
dc.type	Journal Article
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access

Abstract:

Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.

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http://hdl.handle.net/10453/41207