Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Publisher:
Amer Inst Physics
Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2005, 86 (11), pp. 1 - 3
Issue Date:
2005-01
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2005000661.pdf225.26 kB
Adobe PDF
Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of
Please use this identifier to cite or link to this item: