Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Amer Inst Physics
Publication Type:
Journal Article
Applied Physics Letters, 2005, 86 (11), pp. 1 - 3
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Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of
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