Improvements in the Dispersion of Nanosilver in a MgB<inf>2</inf> Matrix through a Graphene Oxide Net

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Journal Article
Journal of Physical Chemistry C, 2015, 119 (19), pp. 10631 - 10640
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© 2015 American Chemical Society. The effects of graphene oxide (GO) addition on the dispersion of nanosilver (Ag) in an MgB < inf > 2 < /inf > matrix were studied using bulk samples prepared through a diffusion process. The influence of the dispersion of Ag and Ag/GO particles on the critical current density (J < inf > c < /inf > ) of MgB < inf > 2 < /inf > was also investigated. GO has emerged as an excellent dopant which can significantly improve both the low- and high-field performance of MgB < inf > 2 < /inf > due to its capability to improve intergrain connectivity (GO) and inter- and intragrain pinning (GO and AgMg). The addition of nanosize Ag particles also results in an improvement of vortex pinning, and at the same time, it offers the advantage of preventing the loss of Mg during the sintering process. It is found that the dispersion of nanosilver in the presence of GO results in significant improvements in the critical current density in MgB < inf > 2 < /inf > , particularly at high magnetic fields, due to improved intergrain connectivity and flux pinning. The use of the GO net as a platform for doping MgB < inf > 2 < /inf > in our case with Ag yielded a 10-fold-better critical current density (J < inf > c < /inf > ) than standard Ag doping at 9 T and 5 K. Even without sophisticated processes, we obtained a J < inf > c < /inf > result of 10 < sup > 4 < /sup > A/cm < sup > 2 < /sup > at 9 T and 5 K, which is one of the best ever achieved.
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