Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - mechanism of lifetime reduction

Polish Academy of Sciences Institute of Physcis
Publication Type:
Journal Article
ACTA Physica Polonica, 2003, 103 (6), pp. 643 - 648
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2003001697.pdf341.65 kB
Adobe PDF
Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn2+ emission to spin dependent magnetic interactions between localized spins of Mn2+ ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.
Please use this identifier to cite or link to this item: