Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

Publication Type:
Journal Article
Citation:
Acta Physica Polonica A, 2003, 103 (6), pp. 643 - 648
Issue Date:
2003-01-01
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The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.
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