Diffusion length of carriers and excitons in GaN - influence of epilayer microstructure

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Journal Article
Applied Surface Science, 2004, 223 pp. 294 - 302
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We demonstrate a correlation between the microsturcture of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homeopitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving strutucal quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations.
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