Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

Publication Type:
Journal Article
Applied Surface Science, 2004, 223 (4), pp. 294 - 302
Issue Date:
Filename Description Size
Thumbnail2004001091.pdf1.01 MB
Adobe PDF
Full metadata record
We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving structural quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations. © 2003 Elsevier B.V. All rights reserved.
Please use this identifier to cite or link to this item: