Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

Publication Type:
Journal Article
Citation:
Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 212 - 215
Issue Date:
2004-01-01
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We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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