Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires

Publication Type:
Journal Article
Citation:
Physica Status Solidi - Rapid Research Letters, 2016, 10 (4), pp. 334 - 338
Issue Date:
2016-04-01
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© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Raman scattering experiments complemented by density functional theory (DFT) calculations of phonon frequencies have been performed to understand the origin of observed high-energy local Raman modes at 2269 cm -1 and 2282 cm -1 on N-plasma treated ZnO nanowires (NWs). We show that these modes increase in intensity with prolonged N-plasma treatment. Our results reveal that the origin of the high-energy Raman local mode is a loosely bound N 2 molecule in the vicinity of a zinc vacancy, which according to our latest work acts as a shallow acceptor and leads to the donor-acceptor-pair transition at 3.232 eV [Phys. Rev. B 92, 024103 (2015)]. Moreover the results provide a more thorough description of nitrogen related complexes in ZnO NWs. Scanning electron microscopy (SEM) image of ZnONWs.
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