Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2002, 81 (20), pp. 3747 - 3749
Issue Date:
2002-11-11
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The influence of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and defects in activated magnesium doped gallium nitride layers was studied. In-plane and depth-resolved cathodoluminescence imaging revealed the correlation between the spatial distribution of the injected carriers and the depth and lateral distribution of activated magnesium acceptors. It was found that the hydrogen dissociation results from electron-hole recombination at hydrogen defect complexes and is associated with the generation of additional defect centers.
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