Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

Gelhausen, O Klein, HN Phillips, MR

Goldys, EM

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2002, 81 (20), pp. 3747 - 3749
Issue Date:: 2002-11-11

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Field	Value	Language
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Klein, HN	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Goldys, EM	en_US
dc.date.issued	2002-11-11	en_US
dc.identifier.citation	Applied Physics Letters, 2002, 81 (20), pp. 3747 - 3749	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/443
dc.description.abstract	The influence of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and defects in activated magnesium doped gallium nitride layers was studied. In-plane and depth-resolved cathodoluminescence imaging revealed the correlation between the spatial distribution of the injected carriers and the depth and lateral distribution of activated magnesium acceptors. It was found that the hydrogen dissociation results from electron-hole recombination at hydrogen defect complexes and is associated with the generation of additional defect centers.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1519358	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN	en_US
dc.type	Journal Article
utslib.citation.volume	20	en_US
utslib.citation.volume	81	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
dc.location.activity	Adelaide, Australia
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	20	en_US
pubs.publication-status	Published	en_US
pubs.volume	81	en_US

Abstract:

The influence of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and defects in activated magnesium doped gallium nitride layers was studied. In-plane and depth-resolved cathodoluminescence imaging revealed the correlation between the spatial distribution of the injected carriers and the depth and lateral distribution of activated magnesium acceptors. It was found that the hydrogen dissociation results from electron-hole recombination at hydrogen defect complexes and is associated with the generation of additional defect centers.

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http://hdl.handle.net/10453/443