Emission of collimated THz pulses from photo-excited semiconductors

IOP Publishing
Publication Type:
Journal Article
Semiconductor Science and Technology, 2004, 19 (4), pp. 449 - 451
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2006006528.pdf112.16 kB
Adobe PDF
It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs.
Please use this identifier to cite or link to this item: