Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Publisher:
Amer Inst Physics
Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2005, 86 (17), pp. 1 - 3
Issue Date:
2005-01
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Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescenc
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