Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2005, 86 (17), pp. 1 - 3
Issue Date:
2005-04-25
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Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C. © 2005 American Institute of Physics.
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