Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Amer Inst Physics
Publication Type:
Journal Article
Applied Physics Letters, 2005, 86 (17), pp. 1 - 3
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2005000794.pdf159.02 kB
Adobe PDF
Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescenc
Please use this identifier to cite or link to this item:

Not enough data to produce graph