X-ray reflectivity study of radio frequency sputtered silicon oxide on silicon

Solina, DM; Cheary, RW; Kalceff, W; McCredie, G

X-ray reflectivity study of radio frequency sputtered silicon oxide on silicon

Solina, DM

Cheary, RW Kalceff, W McCredie, G

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Publication Type:: Journal Article
Citation:: Thin Solid Films, 2005, 489 (1-2), pp. 37 - 41
Issue Date:: 2005-10-01

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Field	Value	Language
dc.contributor.author	Solina, DM https://orcid.org/0000-0003-1810-0096	en_US
dc.contributor.author	Cheary, RW	en_US
dc.contributor.author	Kalceff, W	en_US
dc.contributor.author	McCredie, G	en_US
dc.date.issued	2005-10-01	en_US
dc.identifier.citation	Thin Solid Films, 2005, 489 (1-2), pp. 37 - 41	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://hdl.handle.net/10453/479
dc.description.abstract	An X-ray reflectivity study carried out on 45-450 Å films of radio frequency sputtered silicon oxide on silicon, with particular attention given to the interface between film and substrate. In order to model reflectivity data it was necessary to include an interface layer for all films. This interface layer had a density approaching that of the substrate but due to differing compositions of the deposited film and substrate it was subject to a variation in scattering and absorption properties. © 2005 Elsevier B.V. All rights reserved.	en_US
dc.relation.ispartof	Thin Solid Films	en_US
dc.relation.isbasedon	10.1016/j.tsf.2005.04.092	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	X-ray reflectivity study of radio frequency sputtered silicon oxide on silicon	en_US
dc.type	Journal Article
utslib.citation.volume	1-2	en_US
utslib.citation.volume	489	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access
pubs.issue	1-2	en_US
pubs.publication-status	Published	en_US
pubs.volume	489	en_US

Abstract:

An X-ray reflectivity study carried out on 45-450 Å films of radio frequency sputtered silicon oxide on silicon, with particular attention given to the interface between film and substrate. In order to model reflectivity data it was necessary to include an interface layer for all films. This interface layer had a density approaching that of the substrate but due to differing compositions of the deposited film and substrate it was subject to a variation in scattering and absorption properties. © 2005 Elsevier B.V. All rights reserved.

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http://hdl.handle.net/10453/479