Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
- Publication Type:
- Journal Article
- Applied Physics Letters, 2003, 83 (16), pp. 3293 - 3295
- Issue Date:
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.
Please use this identifier to cite or link to this item: