Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2003, 83 (16), pp. 3293 - 3295
Issue Date:
2003-10-20
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A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.
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