Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride.

Publication Type:
Journal Article
ACS nano, 2016, 10 (8), pp. 7331 - 7338
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
1603.09608v1.pdfSubmitted Version633.1 kB
Adobe PDF
Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report two approaches for engineering quantum emitters in hBN multilayers using either electron beam irradiation or annealing and characterize their photophysical properties. The defects exhibit a broad range of multicolor room-temperature single photon emissions across the visible and the near-infrared spectral ranges, narrow line widths of sub-10 nm at room temperature, and a short excited-state lifetime, and high brightness. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute a step toward deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.
Please use this identifier to cite or link to this item: