Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

Publication Type:
Journal Article
Citation:
Journal of Crystal Growth, 2006, 288 (2), pp. 241 - 246
Issue Date:
2006-03-01
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The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed. © 2006 Elsevier B.V. All rights reserved.
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