System for measuring the junction temperature of a light emitting diode immersed in liquid nitrogen

Publication Type:
Journal Article
Citation:
Review of Scientific Instruments, 2006, 77 (4)
Issue Date:
2006-05-15
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A versatile system has been developed for the measurement under LABVIEW™ control of junction temperatures in a light emitting diode (LED). Measurements are reported on a commercially available high-intensity InGaAlP LED immersed in liquid nitrogen and driven by currents in the range of 18.5-204 mA. The measured junction temperature has an expanded uncertainty of ±2 K at the 95% level of confidence for temperatures from 70 to 298 K. Using the measured junction temperatures, the junction-to-case thermal resistance of the LED was established as 440 KW for devices with intact encapsulation and 307 KW for partial encapsulation. © 2006 American Institute of Physics.
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