Probing carrier behaviour at the nanoscale in gallium nitride using low voltage cathodoluminescence

Cambridge Univesity Press
Publication Type:
Conference Proceeding
Proceedings of Microscopy & Microanalysis 12, Suppl. 2 2006, 2006, pp. 156 - 157
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The increasing application of GaN in blue and UV light emitting diodes and lasers has generated considerable interest in its optical and electrical properties. These optical devices exhibit extremely high emission efficiencies despite the presence of a very high concentration of threading dislocations (108 1010 cm-2) that act as non-radiative recombination channels. This perceived contradiction can be been explained by small (< 100 nm) carrier diffusion lengths which effectively negate the effect of the threading dislocations on the radiative recombination efficiency. These short exciton and minority carrier diffusion lengths in GaN can be explored by cathodoluminescence (CL) microscopy and spectroscopy using a SEM equipped with a Schottky field emission gun operating at 1 kV.
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