Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

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Journal Article
Physica E: Low-Dimensional Systems and Nanostructures, 2002, 13 (2-4), pp. 896 - 899
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We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures. © 2002 Elsevier Science Ltd. All rights reserved.
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