Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

Johnston, MB; Corchia, A; Dowd, A; Linfield, EH; Davies, AG; McLaughlin, R; Arnone, DD; Pepper, M

Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

Johnston, MB Corchia, A Dowd, A

Linfield, EH Davies, AG McLaughlin, R Arnone, DD Pepper, M

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Publication Type:: Journal Article
Citation:: Physica E: Low-Dimensional Systems and Nanostructures, 2002, 13 (2-4), pp. 896 - 899
Issue Date:: 2002-01-01

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Field	Value	Language
dc.contributor.author	Johnston, MB	en_US
dc.contributor.author	Corchia, A	en_US
dc.contributor.author	Dowd, A https://orcid.org/0000-0002-0500-3599	en_US
dc.contributor.author	Linfield, EH	en_US
dc.contributor.author	Davies, AG	en_US
dc.contributor.author	McLaughlin, R	en_US
dc.contributor.author	Arnone, DD	en_US
dc.contributor.author	Pepper, M	en_US
dc.date.issued	2002-01-01	en_US
dc.identifier.citation	Physica E: Low-Dimensional Systems and Nanostructures, 2002, 13 (2-4), pp. 896 - 899	en_US
dc.identifier.issn	1386-9477	en_US
dc.identifier.uri	http://hdl.handle.net/10453/8359
dc.description.abstract	We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures. © 2002 Elsevier Science Ltd. All rights reserved.	en_US
dc.relation.ispartof	Physica E: Low-Dimensional Systems and Nanostructures	en_US
dc.relation.isbasedon	10.1016/S1386-9477(02)00229-1	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces	en_US
dc.type	Journal Article
utslib.citation.volume	2-4	en_US
utslib.citation.volume	13	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access
pubs.issue	2-4	en_US
pubs.publication-status	Published	en_US
pubs.volume	13	en_US

Abstract:

We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures. © 2002 Elsevier Science Ltd. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/8359