A system for supplying constant electrical power for postprocessing tin-doped indium oxide films

Bertinshaw, J; Kirkup, L; Phillips, M; Placido, F

A system for supplying constant electrical power for postprocessing tin-doped indium oxide films

Bertinshaw, J Kirkup, L Phillips, M

Placido, F

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Publication Type:: Journal Article
Citation:: Review of Scientific Instruments, 2008, 79 (7)
Issue Date:: 2008-08-15

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Field	Value	Language
dc.contributor.author	Bertinshaw, J	en_US
dc.contributor.author	Kirkup, L	en_US
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Placido, F	en_US
dc.date.issued	2008-08-15	en_US
dc.identifier.citation	Review of Scientific Instruments, 2008, 79 (7)	en_US
dc.identifier.issn	0034-6748	en_US
dc.identifier.uri	http://hdl.handle.net/10453/8391
dc.description.abstract	Annealing tin doped indium oxide (ITO) thin films by self-heating shows potential for reducing the crystallization temperature required to optimize the optical and electrical properties of the films. It also shows promise as a cost effective method of studying the heat treatment process in situ. A computer based solution was developed to allow for a precise control over the annealing process. To anneal at a fixed temperature, a feedback loop senses changes in the resistance of the sample and adjusts the current across the load accordingly to ensure constant delivery of power to an ITO film. © 2008 American Institute of Physics.	en_US
dc.relation.ispartof	Review of Scientific Instruments	en_US
dc.relation.isbasedon	10.1063/1.2956976	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	A system for supplying constant electrical power for postprocessing tin-doped indium oxide films	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	79	en_US
utslib.for	0299 Other Physical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
dc.location.activity	ISI:000258179400059	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	79	en_US

Abstract:

Annealing tin doped indium oxide (ITO) thin films by self-heating shows potential for reducing the crystallization temperature required to optimize the optical and electrical properties of the films. It also shows promise as a cost effective method of studying the heat treatment process in situ. A computer based solution was developed to allow for a precise control over the annealing process. To anneal at a fixed temperature, a feedback loop senses changes in the resistance of the sample and adjusts the current across the load accordingly to ensure constant delivery of power to an ITO film. © 2008 American Institute of Physics.

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http://hdl.handle.net/10453/8391