Argon plasma immersion ion implantation of polystyrene films

Kondyurin, A; Gan, BK; Bilek, MMM; McKenzie, DR; Mizuno, K; Wuhrer, R

Argon plasma immersion ion implantation of polystyrene films

Kondyurin, A Gan, BK Bilek, MMM McKenzie, DR Mizuno, K Wuhrer, R

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Publication Type:: Journal Article
Citation:: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2008, 266 (7), pp. 1074 - 1084
Issue Date:: 2008-04-01

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Field	Value	Language
dc.contributor.author	Kondyurin, A	en_US
dc.contributor.author	Gan, BK	en_US
dc.contributor.author	Bilek, MMM	en_US
dc.contributor.author	McKenzie, DR	en_US
dc.contributor.author	Mizuno, K	en_US
dc.contributor.author	Wuhrer, R	en_US
dc.date.issued	2008-04-01	en_US
dc.identifier.citation	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2008, 266 (7), pp. 1074 - 1084	en_US
dc.identifier.issn	0168-583X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/9164
dc.description.abstract	Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 × 1014-2 × 1016 ions/cm2, was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored. © 2008 Elsevier B.V. All rights reserved.	en_US
dc.relation.ispartof	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en_US
dc.relation.isbasedon	10.1016/j.nimb.2008.02.063	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Argon plasma immersion ion implantation of polystyrene films	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	266	en_US
utslib.for	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics	en_US
utslib.for	0915 Interdisciplinary Engineering	en_US
utslib.for	0402 Geochemistry	en_US
dc.location.activity	ISI:000256144500008	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
utslib.copyright.status	closed_access
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	266	en_US

Abstract:

Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 × 1014-2 × 1016 ions/cm2, was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored. © 2008 Elsevier B.V. All rights reserved.

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http://hdl.handle.net/10453/9164