Argon plasma immersion ion implantation of polystyrene films

Elsevier Science Bv
Publication Type:
Journal Article
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, 2008, 266 (7), pp. 1074 - 1084
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2008000229OK.pdf858.42 kB
Adobe PDF
Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 x 10(14)-2 x 10(16) ions/cm(2), was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching
Please use this identifier to cite or link to this item: