A study of reverse bias in a dye sensitised photoelectrochemical device

Publication Type:
Journal Article
Solar Energy Materials and Solar Cells, 2003, 76 (2), pp. 175 - 181
Issue Date:
Filename Description Size
Thumbnail2006006830OK.pdf225.76 kB
Adobe PDF
Full metadata record
A dye-sensitized nanocrystalline solar subjected to reverse bias of 800 m V showed no measurable loss in performance. However, at 2000 m V, a dramatic and irreversible reduction in the cells performance is observed. Raman spectroscopy experiments suggested that no desorption of the photosensitising dye occurred. Spectroelectrochemical experiments revealed that an irreversible loss of intensity in the metal to ligand charge transfer band at 540 nm occurred. In practical terms, these results indicate that cells which are incorrectly connected to an array of cells or a system failure where potentials greater than 1500 m V are present, may be irreversibly damaged. © 2002 Elsevier Science B.V. All rights reserved.
Please use this identifier to cite or link to this item: