Dual metal-insulator and insulator-insulator switching in nanoscale and Al doped VO<inf>2</inf>

Gentle, A; Smith, GB

Dual metal-insulator and insulator-insulator switching in nanoscale and Al doped VO<inf>2</inf>

Gentle, A

Smith, GB

Permalink

Publication Type:: Journal Article
Citation:: Journal of Physics D: Applied Physics, 2008, 41 (1)
Issue Date:: 2008-01-07

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download full textAdobe PDF (306.93 kB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Gentle, A https://orcid.org/0000-0001-8964-0722	en_US
dc.contributor.author	Smith, GB https://orcid.org/0000-0002-6985-2880	en_US
dc.date.issued	2008-01-07	en_US
dc.identifier.citation	Journal of Physics D: Applied Physics, 2008, 41 (1)	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://hdl.handle.net/10453/9338
dc.description.abstract	Thin films of VO2 doped with aluminium, or with nanoscale grain sizes, have been produced. They display semiconductor resistive behaviour above the transition temperature Tc, but a metallic and plasmonic optical response. All samples optically switch over almost identical large ranges at the transition, but have quite variable resistive switching. At fixed grain size a rigorous new quantitative correlation is found between semiconductor resistivity below Tc and the activation energy above Tc as Al doping level varies. Large crystals doped with Al also display this dual behaviour. A possible mechanism is discussed involving fast local fluctuations on neighbouring V4+ ions involving transient dimers with no net spin. Such fluctuations would then need to interact and correlate their motion over the scale of a nanograin within the lifetime of the dimer excitation. © 2008 IOP Publishing Ltd.	en_US
dc.relation.ispartof	Journal of Physics D: Applied Physics	en_US
dc.relation.isbasedon	10.1088/0022-3727/41/1/015402	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Dual metal-insulator and insulator-insulator switching in nanoscale and Al doped VO<inf>2</inf>	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	41	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
dc.location.activity	ISI:000253177300035	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	41	en_US

Abstract:

Thin films of VO2 doped with aluminium, or with nanoscale grain sizes, have been produced. They display semiconductor resistive behaviour above the transition temperature Tc, but a metallic and plasmonic optical response. All samples optically switch over almost identical large ranges at the transition, but have quite variable resistive switching. At fixed grain size a rigorous new quantitative correlation is found between semiconductor resistivity below Tc and the activation energy above Tc as Al doping level varies. Large crystals doped with Al also display this dual behaviour. A possible mechanism is discussed involving fast local fluctuations on neighbouring V4+ ions involving transient dimers with no net spin. Such fluctuations would then need to interact and correlate their motion over the scale of a nanograin within the lifetime of the dimer excitation. © 2008 IOP Publishing Ltd.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/9338