Charge state switching of Cu acceptors in ZnO nanorods

Rahman, MA; Westerhausen, MT; Nenstiel, C; Choi, S; Hoffmann, A; Gentle, A; Phillips, MR; Ton-That, C

Charge state switching of Cu acceptors in ZnO nanorods

Rahman, MA

Westerhausen, MT Nenstiel, C Choi, S Hoffmann, A Gentle, A

Phillips, MR

Ton-That, C

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2017, 110 (12)
Issue Date:: 2017-03-20

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Field	Value	Language
dc.contributor.author	Rahman, MA https://orcid.org/0000-0002-5433-4124	en_US
dc.contributor.author	Westerhausen, MT	en_US
dc.contributor.author	Nenstiel, C	en_US
dc.contributor.author	Choi, S	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	Gentle, A https://orcid.org/0000-0001-8964-0722	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.date.available	2020-05-25T19:05:40Z
dc.date.issued	2017-03-20	en_US
dc.identifier.citation	Applied Physics Letters, 2017, 110 (12)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/96957
dc.description.abstract	© 2017 Author(s). Undoped and Ga-doped ZnO nanorods both exhibit an intense green luminescence (GL) band centered at ∼2.4 eV. Unlike the defect-related GL in undoped nanorods, the GL band in Ga-doped nanorods displays a periodic fine structure separated by 72 meV, which consists of doublets with an energy spacing of 30 ± 3 meV. The emergence of the structured GL is due to the Cu+ state being stabilized by the rise in the Fermi level above the 0/- (Cu2+/Cu+) charge transfer level as a result of Ga donor incorporation. From a combination of optical characterization and simulation using the Brownian oscillator model, the doublet fine structures are shown to originate from two hole transitions with the Cu+ state located at 390 meV above the valence band.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP150103317
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4978761	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Charge state switching of Cu acceptors in ZnO nanorods	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	110	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	open_access
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	110	en_US

Abstract:

© 2017 Author(s). Undoped and Ga-doped ZnO nanorods both exhibit an intense green luminescence (GL) band centered at ∼2.4 eV. Unlike the defect-related GL in undoped nanorods, the GL band in Ga-doped nanorods displays a periodic fine structure separated by 72 meV, which consists of doublets with an energy spacing of 30 ± 3 meV. The emergence of the structured GL is due to the Cu+ state being stabilized by the rise in the Fermi level above the 0/- (Cu2+/Cu+) charge transfer level as a result of Ga donor incorporation. From a combination of optical characterization and simulation using the Brownian oscillator model, the doublet fine structures are shown to originate from two hole transitions with the Cu+ state located at 390 meV above the valence band.

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http://hdl.handle.net/10453/96957