Atomically thin lateral p-n junction photodetector with large effective detection area

Publisher:
IOP Publishing
Publication Type:
Journal Article
Citation:
2D Materials, 2016, 3 (4), pp. 1 - 9
Issue Date:
2016-09-23
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© 2016 IOP Publishing Ltd. The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe 2 . Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe 2 junction surface. The responsivity of the WSe 2 junction photodetector is over 3200 times higher than that of a monolayer WSe 2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
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