Atomically thin lateral p-n junction photodetector with large effective detection area
- Publication Type:
- Journal Article
- Citation:
- 2D Materials, 2016, 3 (4)
- Issue Date:
- 2016-09-23
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Xu_2016_2D_Mater._3_041001.pdf | Published Version | 2.28 MB |
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© 2016 IOP Publishing Ltd. The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
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