Synthesis of ultrathin composition graded doped Lateral WSe<inf>2</inf>/WS<inf>2</inf> heterostructures

Li, Z; Zheng, J; Zhang, Y; Zheng, C; Woon, WY; Chuang, MC; Tsai, HC; Chen, CH; Davis, A; Xu, ZQ; Lin, J; Zhang, H; Bao, Q

Synthesis of ultrathin composition graded doped Lateral WSe<inf>2</inf>/WS<inf>2</inf> heterostructures

Li, Z Zheng, J Zhang, Y Zheng, C Woon, WY Chuang, MC Tsai, HC Chen, CH Davis, A Xu, ZQ

Lin, J Zhang, H Bao, Q

Permalink

Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2017, 9 (39), pp. 34204 - 34212
Issue Date:: 2017-01-01

Closed Access

	Filename	Description	Size
	acsami.7b08668.pdf	Published Version	9.79 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Zheng, J	en_US
dc.contributor.author	Zhang, Y	en_US
dc.contributor.author	Zheng, C	en_US
dc.contributor.author	Woon, WY	en_US
dc.contributor.author	Chuang, MC	en_US
dc.contributor.author	Tsai, HC	en_US
dc.contributor.author	Chen, CH	en_US
dc.contributor.author	Davis, A	en_US
dc.contributor.author	Xu, ZQ https://orcid.org/0000-0001-7291-1426	en_US
dc.contributor.author	Lin, J	en_US
dc.contributor.author	Zhang, H	en_US
dc.contributor.author	Bao, Q	en_US
dc.date.issued	2017-01-01	en_US
dc.identifier.citation	ACS Applied Materials and Interfaces, 2017, 9 (39), pp. 34204 - 34212	en_US
dc.identifier.issn	1944-8244	en_US
dc.identifier.uri	http://hdl.handle.net/10453/123941
dc.description.abstract	© 2017 American Chemical Society. Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.	en_US
dc.relation.ispartof	ACS Applied Materials and Interfaces	en_US
dc.relation.isbasedon	10.1021/acsami.7b08668	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Synthesis of ultrathin composition graded doped Lateral WSe<inf>2</inf>/WS<inf>2</inf> heterostructures	en_US
dc.type	Journal Article
utslib.citation.volume	39	en_US
utslib.citation.volume	9	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	39	en_US
pubs.publication-status	Published	en_US
pubs.volume	9	en_US

Abstract:

© 2017 American Chemical Society. Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/123941