In-situ scanning transmission electron microscopy study of Al-amorphous SiO<inf>2</inf> layer-SiC interface

Adabifiroozjaei, E; Rastkerdar, E; Nemoto, Y; Nakayama, Y; Nishimiya, Y; Fronzi, M; Yao, Y; Nguyen, MT; Molina-Luna, L; Suzuki, TS

In-situ scanning transmission electron microscopy study of Al-amorphous SiO<inf>2</inf> layer-SiC interface

Adabifiroozjaei, E Rastkerdar, E Nemoto, Y Nakayama, Y Nishimiya, Y Fronzi, M

Yao, Y Nguyen, MT Molina-Luna, L Suzuki, TS

Permalink

Publisher:: SPRINGER
Publication Type:: Journal Article
Citation:: Journal of Materials Science, 2023, 58, (6), pp. 2456-2468
Issue Date:: 2023-02-01

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download Published versionAdobe PDF (4.47 MB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Adabifiroozjaei, E
dc.contributor.author	Rastkerdar, E
dc.contributor.author	Nemoto, Y
dc.contributor.author	Nakayama, Y
dc.contributor.author	Nishimiya, Y
dc.contributor.author	Fronzi, M https://orcid.org/0000-0001-7855-9216
dc.contributor.author	Yao, Y
dc.contributor.author	Nguyen, MT
dc.contributor.author	Molina-Luna, L
dc.contributor.author	Suzuki, TS
dc.date.accessioned	2024-03-25T03:29:36Z
dc.date.available	2024-03-25T03:29:36Z
dc.date.issued	2023-02-01
dc.identifier.citation	Journal of Materials Science, 2023, 58, (6), pp. 2456-2468
dc.identifier.issn	0022-2461
dc.identifier.issn	1573-4803
dc.identifier.uri	http://hdl.handle.net/10453/177080
dc.description.abstract	Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO2–SiC interface. The investigation includes electrical, chemical, and structural analysis of the interface at different temperatures (25–600 °C). The results show that at ~ 500 °C the electrical (three-orders of magnitude resistivity drop), chemical (dissolution of SiO2 amorphous layer), and microstructural features (e.g. formation of Al2O3, Si and Al4C3) of the interface start to change. According to the results, amorphous SiO2 dissolves in Al, leading to formation of α-Al2O3 and Si within the Al. In contrast, elemental interdiffusion (Al3+ ⇄ Si4+) between Al and SiC occurs resulting in formation of Al4C3. From the results, we can infer that reaction mechanism between Al and crystalline SiC is different with that between Al and SiO2 amorphous phase. It is believed that structural similarities between SiC and Al4C3 play an important role in paving the way for elemental interdiffusion.
dc.language	English
dc.publisher	SPRINGER
dc.relation.ispartof	Journal of Materials Science
dc.relation.isbasedon	10.1007/s10853-023-08186-z
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Materials
dc.subject.classification	34 Chemical sciences
dc.subject.classification	40 Engineering
dc.title	In-situ scanning transmission electron microscopy study of Al-amorphous SiO<inf>2</inf> layer-SiC interface
dc.type	Journal Article
utslib.citation.volume	58
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
utslib.copyright.status	open_access	*
dc.date.updated	2024-03-25T03:29:34Z
pubs.issue	6
pubs.publication-status	Published
pubs.volume	58
utslib.citation.issue	6

Abstract:

Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO2–SiC interface. The investigation includes electrical, chemical, and structural analysis of the interface at different temperatures (25–600 °C). The results show that at ~ 500 °C the electrical (three-orders of magnitude resistivity drop), chemical (dissolution of SiO2 amorphous layer), and microstructural features (e.g. formation of Al2O3, Si and Al4C3) of the interface start to change. According to the results, amorphous SiO2 dissolves in Al, leading to formation of α-Al2O3 and Si within the Al. In contrast, elemental interdiffusion (Al3+ ⇄ Si4+) between Al and SiC occurs resulting in formation of Al4C3. From the results, we can infer that reaction mechanism between Al and crystalline SiC is different with that between Al and SiO2 amorphous phase. It is believed that structural similarities between SiC and Al4C3 play an important role in paving the way for elemental interdiffusion.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/177080