| Issue Date | Title | Author(s) |
| 2022-09-01 | Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics | Azimi, Z; Gopakumar, A; Li, L; Kremer, F; Lockrey, M; Wibowo, AA; Nguyen, HT; Tan, HH; Jagadish, C; Wong-Leung, J |
| 2022-10-26 | Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam. | Budnik, G; Scott, JA; Jiao, C; Maazouz, M; Gledhill, G; Fu, L; Tan, HH; Toth, M |
| 2021-11-13 | High-speed InGaAs/lnP Quantum Well Nanowire Array Light Emitting Diodes at Telecommunication Wavelength | Zhang, F; Su, Z; Zhu, Y; Li, Z; Lockrey, M; Li, L; Lu, Y; Tan, HH; Jagadish, C; Fu, L |
| 2017-02-01 | Growth and optical properties of In<inf>x</inf>Ga<inf>1−x</inf>P nanowires synthesized by selective-area epitaxy | Berg, A; Caroff, P; Shahid, N; Lockrey, MN; Yuan, X; Borgström, MT; Tan, HH; Jagadish, C |
| 2022-02-01 | Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride. | Stern, HL; Gu, Q; Jarman, J; Eizagirre Barker, S; Mendelson, N; Chugh, D; Schott, S; Tan, HH; Sirringhaus, H; Aharonovich, I; Atatüre, M |
| 2020-03-02 | Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride | Mendelson, N; Chugh, D; Reimers, JR; Cheng, TS; Gottscholl, A; Long, H; Mellor, CJ; Zettl, A; Dyakonov, V; Beton, PH; Novikov, SV; Jagadish, C; Tan, HH; Ford, MJ; Toth, M; Bradac, C; Aharonovich, I |
| 2018-06-21 | The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods | Zhao, B; Lockrey, MN; Caroff, P; Wang, N; Li, L; Wong-Leung, J; Tan, HH; Jagadish, C |
| 2008-04-21 | Tuning the bandgap of InAs quantum dots by selective-area MOCVD | Mokkapati, S; Wong-Leung, J; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
| 2017-02-20 | Single n<sup>+</sup>-i-n<sup>+</sup> InP nanowires for highly sensitive terahertz detection | Peng, K; Parkinson, P; Gao, Q; Boland, JL; Li, Z; Wang, F; Mokkapati, S; Fu, L; Johnston, MB; Tan, HH; Jagadish, C |
| 2017-07-25 | Excited State Biexcitons in Atomically Thin MoSe<inf>2</inf> | Pei, J; Yang, J; Wang, X; Wang, F; Mokkapati, S; Lü, T; Zheng, JC; Qin, Q; Neshev, D; Tan, HH; Jagadish, C; Lu, Y |
