Cryogenic electron beam induced chemical etching

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Journal Article
ACS Applied Materials and Interfaces, 2014, 6 (21), pp. 18457 - 18460
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© 2014 American Chemical Society. Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3and XeF2EBIE of silicon.
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