Design of nanocapacitors and associated materials challenges

Ekanayake, SR; Cortie, MB; Ford, MJ

Design of nanocapacitors and associated materials challenges

Ekanayake, SR Cortie, MB

Ford, MJ

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Publication Type:: Journal Article
Citation:: Current Applied Physics, 2004, 4 (2-4), pp. 250 - 254
Issue Date:: 2004-04-01

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Field	Value	Language
dc.contributor.author	Ekanayake, SR	en_US
dc.contributor.author	Cortie, MB https://orcid.org/0000-0003-3202-6398	en_US
dc.contributor.author	Ford, MJ https://orcid.org/0000-0002-8595-5900	en_US
dc.date.issued	2004-04-01	en_US
dc.identifier.citation	Current Applied Physics, 2004, 4 (2-4), pp. 250 - 254	en_US
dc.identifier.issn	1567-1739	en_US
dc.identifier.uri	http://hdl.handle.net/10453/772
dc.description.abstract	The International Technology Roadmap for Semiconductors (ITRS) projects that the spatial resolution of feature sizes in integrated circuits is rapidly approaching nanoscopic dimensions. Consequently, there is an active interest in the design of nanoscale circuit elements such as transistors, resistors, and capacitors. The properties of materials used to fabricate capacitors pose an important design factor, as with all circuit elements. We analyze the critical materials properties that would influence engineering nanocapacitors (nanoscopic capacitors), and show that at nanoscale, dielectric properties (dielectric constant, dielectric strength, and dielectric relaxation) determine the practicality of such capacitors. © 2003 Elsevier B.V. All rights reserved.	en_US
dc.relation.ispartof	Current Applied Physics	en_US
dc.relation.isbasedon	10.1016/j.cap.2003.11.021	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Design of nanocapacitors and associated materials challenges	en_US
dc.type	Journal Article
utslib.citation.volume	2-4	en_US
utslib.citation.volume	4	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/DVC (Research)
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access
pubs.issue	2-4	en_US
pubs.publication-status	Published	en_US
pubs.volume	4	en_US

Abstract:

The International Technology Roadmap for Semiconductors (ITRS) projects that the spatial resolution of feature sizes in integrated circuits is rapidly approaching nanoscopic dimensions. Consequently, there is an active interest in the design of nanoscale circuit elements such as transistors, resistors, and capacitors. The properties of materials used to fabricate capacitors pose an important design factor, as with all circuit elements. We analyze the critical materials properties that would influence engineering nanocapacitors (nanoscopic capacitors), and show that at nanoscale, dielectric properties (dielectric constant, dielectric strength, and dielectric relaxation) determine the practicality of such capacitors. © 2003 Elsevier B.V. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/772