| Issue Date | Title | Author(s) |
| 2004-05-31 | Doping-level-dependent optical properties of GaN:Mn | Gelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M |
| 2001-06-01 | Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer | Godlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM |
| 2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
| 2006-08-01 | Synthesis and characterization of doped and undoped ZnO nanostructures | McBean, KE; Phillips, MR; Goldys, EM |
| 2003-12-01 | Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN | Gelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A |
| 2014-10-13 | Practical implementation, characterization and applications of a multi-colour time-gated luminescence microscope | Zhang, L; Zheng, X; Deng, W; Lu, Y; Lechevallier, S; Ye, Z; Goldys, EM; Dawes, JM; Piper, JA; Yuan, J; Verelst, M; Jin, D |
| 2003-10-01 | Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 2007-01-01 | Annealing of ZnS nanocrystals grown by colloidal synthesis | Motlan; Zhu, G; Drozdowicz-Tomsia, K; McBean, K; Phillips, MR; Goldys, EM |
| 2004-01-01 | Cathodoluminescence properties of zinc oxide nanoparticiles | Phillips, MR; Gelhausen, O; Goldys, EM |
