| Issue Date | Title | Author(s) |
| 2004-05-31 | Doping-level-dependent optical properties of GaN:Mn | Gelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M |
| 2001-03-15 | Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films | Gelhausen, O; Phillips, MR; Toth, M |
| 2003-12-01 | Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN | Gelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A |
| 2003-10-01 | Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 2004-01-01 | Cathodoluminescence properties of zinc oxide nanoparticiles | Phillips, MR; Gelhausen, O; Goldys, EM |
| 2006-10-12 | Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments | Malguth, E; Hoffmann, A; Gehlhoff, W; Gelhausen, O; Phillips, MR; Xu, X |
| 2003-04-01 | Cathodoluminescence efficiency dependence on excitation density in n-type gallium nitride | Phillips, MR; Telg, H; Kucheyev, SO; Gelhausen, O; Toth, M |
| 2003-10-20 | Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 2004-03-01 | Identification of bound exciton complexes in ZnO | Strassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK |
| 2003-12-07 | A method to improve the light emission efficiency of Mg-doped GaN | Gelhausen, O; Phillips, MR; Goldys, EM |
