| Issue Date | Title | Author(s) |
| 2017-12-01 | Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (Scientific Reports (2017) 7 (457) DOI: 10.1038/s41598-017-07568-z) | Choi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C |
| 2017-10-01 | Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires | Zhu, L; Khachadorian, S; Hoffmann, A; Phillips, MR; Ton-That, C |
| 2013-01-01 | Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method | Gogova, D; Petrov, PP; Buegler, M; Wagner, MR; Nenstiel, C; Callsen, G; Schmidbauer, M; Kucharski, R; Zajac, M; Dwilinski, R; Phillips, MR; Hoffmann, A; Fornari, R |
| 2020-02-13 | Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation. | Fiedler, S; Lem, LOLC; Ton-That, C; Schleuning, M; Hoffmann, A; Phillips, MR |
| 2015-07-06 | Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing | Ton-That, C; Zhu, L; Lockrey, MN; Phillips, MR; Cowie, BCC; Tadich, A; Thomsen, L; Khachadorian, S; Schlichting, S; Jankowski, N; Hoffmann, A |
| 2013-12-30 | Effects of strain on the valence band structure and exciton-polariton energies in ZnO | Wagner, MR; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, AV; Schleife, A; Bechstedt, F; Phillips, MR |
| 2004-03-01 | Dissociation of H-related defect complexes in Mg-doped GaN | Gelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A |
| 2014-01-01 | Shallow carrier traps in hydrothermal ZnO crystals | Ton-That, C; Lem, LLC; Phillips, MR; Reisdorffer, F; Mevellec, J; Nguyen, TP; Nenstiel, C; Hoffmann, A |
| 2015-01-01 | Effects of annealing on optical and structural properties of zinc oxide nanocrystals | Khachadorian, S; Gillen, R; Choi, S; Ton-That, C; Kliem, A; Maultzsch, J; Phillips, MR; Hoffmann, A |
| 2011-07-11 | Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers | Wagner, MR; Callsen, G; Reparaz, JS; Schulze, JH; Kirste, R; Cobet, M; Ostapenko, IA; Rodt, S; Nenstiel, C; Kaiser, M; Hoffmann, A; Rodina, AV; Phillips, MR; Lautenschläger, S; Eisermann, S; Meyer, BK |
