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Issue DateTitleAuthor(s)
2011-07-11Bound excitons in ZnO: Structural defect complexes versus shallow impurity centersWagner, MR; Callsen, G; Reparaz, JS; Schulze, JH; Kirste, R; Cobet, M; Ostapenko, IA; Rodt, S; Nenstiel, C; Kaiser, M; Hoffmann, A; Rodina, AV; Phillips, MR; Lautenschläger, S; Eisermann, S; Meyer, BK
2017-03-20Charge state switching of Cu acceptors in ZnO nanorodsRahman, MA; Westerhausen, MT; Nenstiel, C; Choi, S; Hoffmann, A; Gentle, A; Phillips, MR; Ton-That, C
2017-10-01Chemical, vibrational and optical signatures of nitrogen in ZnO nanowiresZhu, L; Khachadorian, S; Hoffmann, A; Phillips, MR; Ton-That, C
2017-06-01Constructing enhanced default theories incrementallyBeydoun, G; Hoffmann, A; Gill, A
2017-12-01Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (Scientific Reports (2017) 7 (457) DOI: 10.1038/s41598-017-07568-z)Choi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C
2020-02-13Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation.Fiedler, S; Lem, LOLC; Ton-That, C; Schleuning, M; Hoffmann, A; Phillips, MR
2018-01-01The development of a global Midwifery Education Accreditation ProgrammeNove, A; Pairman, S; Bohle, LF; Garg, S; Moyo, NT; Michel-Schuldt, M; Hoffmann, A; Castro, G
2004-03-01Dissociation of H-related defect complexes in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
2004-05-31Doping-level-dependent optical properties of GaN:MnGelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
2013-01-01Dynamic evaluation of the development process of knowledge-based information systemsBeydoun, G; Hoffmann, A
2015-01-01Effects of annealing on optical and structural properties of zinc oxide nanocrystalsKhachadorian, S; Gillen, R; Choi, S; Ton-That, C; Kliem, A; Maultzsch, J; Phillips, MR; Hoffmann, A
2013-12-30Effects of strain on the valence band structure and exciton-polariton energies in ZnOWagner, MR; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, AV; Schleife, A; Bechstedt, F; Phillips, MR
2013Effects of Strain on the valence band structure and exciton-polariton energies in ZnOWagner, M; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, A; Schleife, A; Bechstedt, F; Phillips, M
2020-06-01Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescenceFiedler, S; Lem, LOLC; Ton-That, C; Hoffmann, A; Phillips, MR
2008-03-01Fe in III-V and II-VI semiconductorsMalguth, E; Hoffmann, A; Phillips, MR
2006-05-16Fe-centers in GaN as candidates for spintronics applicationsMnlguth, E; Hoffmann, A; Phillips, M; Gehlhoff, W
2003-12-01Formation and dissociation of hydrogen-related defect centers in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
2004-03-01Identification of bound exciton complexes in ZnOStrassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK
2010-12-01Luminescence of InGaN MQWs grown on misorientated GaN substratesNenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A
2002-01Mining Both Positive and Negative Association RulesWu, X; Zhang, C; Zhang, S; Sammut, C; Hoffmann, A
Showing results 1 to 20 of 35  next >