Browsing byAuthorLeszczynski, M
Showing results 1 to 5 of 5
Issue Date | Title | Author(s) |
2003-01-01 | Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission | Godlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
2004-01-01 | In-depth and in-plane profiling of light emission properties of InGaN-based laser diode | Godlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
2005-10-01 | Light emission properties of GaN-based laser diode structures | Godlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S |
2002-01-01 | Relationship between sample morphology and carrier diffusion length in gan thin films | Godlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S |