Issue Date | Title | Author(s) |
2017-01-01 | Growing graphene on semiconductors | Motta, N; Iacopi, F; Coletti, C |
2019-01-11 | Electron effective attenuation length in epitaxial graphene on SiC | Amjadipour, M; Macleod, J; Lipton-Duffin, J; Tadich, A; Boeckl, JJ; Iacopi, F; Motta, N |
2016-03-21 | Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing | Gupta, B; Di Bernardo, I; Mondelli, P; Della Pia, A; Betti, MG; Iacopi, F; Mariani, C; Motta, N |
2015-05-30 | The transition from 3C SiC (1 1 1) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy | Gupta, B; Placidi, E; Hogan, C; Mishra, N; Iacopi, F; Motta, N |
2016-09-01 | Graphene growth on silicon carbide: A review | Mishra, N; Boeckl, J; Motta, N; Iacopi, F |
2018-02-15 | Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111) | Amjadipour, M; Tadich, A; Boeckl, JJ; Lipton-Duffin, J; MacLeod, J; Iacopi, F; Motta, N |
2017-01-01 | Preface | Motta, N; Iacopi, F; Coletti, C |
2017-07-24 | Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage | Amjadipour, M; Macleod, J; Lipton-Duffin, J; Iacopi, F; Motta, N |
2014-05-28 | Controlling the surface roughness of epitaxial SiC on silicon | Mishra, N; Hold, L; Iacopi, A; Gupta, B; Motta, N; Iacopi, F |
2016-03-01 | Time evolution of graphene growth on SiC as a function of annealing temperature | Zarotti, F; Gupta, B; Iacopi, F; Sgarlata, A; Tomellini, M; Motta, N |