Issue Date | Title | Author(s) |
2019-05-14 | Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires | Yuan, X; Li, L; Li, Z; Wang, F; Wang, N; Fu, L; He, J; Tan, HH; Jagadish, C |
2006-12-01 | Integration of quantum dot devices by selective area epitaxy | Mokkapati, S; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
2005-03-14 | Controlling the properties of InGaAs quantum dots by selective-area epitaxy | Mokkapati, S; Lever, P; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
2019-01-01 | Shape Engineering of InP Nanostructures by Selective Area Epitaxy | Wang, N; Yuan, X; Zhang, X; Gao, Q; Zhao, B; Li, L; Lockrey, M; Tan, HH; Jagadish, C; Caroff, P |
2015-10-09 | Room temperature GaAsSb single nanowire infrared photodetectors | Li, Z; Yuan, X; Fu, L; Peng, K; Wang, F; Fu, X; Caroff, P; White, TP; Hoe Tan, H; Jagadish, C |
2017-09-01 | Manipulating second-harmonic light from semiconductor nanocrystals | Neshev, D; Camacho-Morales, R; Rahmani, M; Kruk, S; Wang, L; Xu, L; Smirnova, D; Solntsev, A; Miroshnichenko, A; Tan, HH; Karouta, F; Naureen, S; Vora, K; Carletti, L; De Angelis, C; Jagadish, C; Kivshar, Y |
2023-08-08 | Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers. | Wong, WW; Wang, N; Esser, BD; Church, SA; Li, L; Lockrey, M; Aharonovich, I; Parkinson, P; Etheridge, J; Jagadish, C; Tan, HH |