| Issue Date | Title | Author(s) |
| 2011-12-14 | Distribution of visible luminescence centers in hydrogen-doped ZnO | Lem, LLC; Ton-That, C; Phillips, MR |
| 2003-12-01 | Optical properties of Mn-doped GaN | Gelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M |
| 2002-05-01 | Chemical origin of the yellow luminescence in GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G |
| 2014-01-01 | Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing | Anantachaisilp, S; Smith, SM; Ton-That, C; Osotchan, T; Moon, AR; Phillips, MR |
| 2011-01-03 | Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitride | Chen, PPT; Downes, JE; Fernandes, AJ; Butcher, KSA; Wintrebert-Fouquet, M; Wuhrer, R; Phillips, MR |
| 2006-05-02 | Controlled assembly of 1,4-phenylenedimethanethiol molecular nanostructures | Zareie, HM; McDonagh, AM; Edgar, J; Ford, MJ; Cortie, MB; Phillips, MR |
| 2010-12-01 | Luminescence of InGaN MQWs grown on misorientated GaN substrates | Nenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A |
| 2014-11-07 | Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements | Callsen, G; Wagner, MR; Reparaz, JS; Nippert, F; Kure, T; Kalinowski, S; Hoffmann, A; Ford, MJ; Phillips, MR; Dalmau, RF; Schlesser, R; Collazo, R; Sitar, Z |
| 2006-12-01 | Integration of quantum dot devices by selective area epitaxy | Mokkapati, S; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
| 2001-06-01 | Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system | Godlewski, M; Mackowski, S; Karczewski, G; Goldys, EM; Phillips, MR |
