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Issue DateTitleAuthor(s)
2008-08-15A system for supplying constant electrical power for postprocessing tin-doped indium oxide filmsBertinshaw, J; Kirkup, L; Phillips, M; Placido, F
2002-01Time dependent behaviour of positive ions in the variable pressure scanning electron microscopePhillips, M; Morgan, SW; Englebrecht, J; Sewell, T; Witcombe, M
2012-11-19Effects of oxygen on electron beam induced deposition of SiO<inf>2</inf> using physisorbed and chemisorbed tetraethoxysilaneBishop, J; Toth, M; Phillips, M; Lobo, C
2019-07-31Surface polarity control in ZnO films deposited by pulsed laser depositionLuo, CQ; Ling, FCC; Rahman, MA; Phillips, M; Ton-That, C; Liao, C; Shih, K; Lin, J; Tam, HW; Djurišić, AB; Wang, SP
2001-01-01Optical emission due to ionic displacements in alkaline earth titanatesCooper, R; Smith, KL; Colella, M; Vance, ER; Phillips, M
2012-10-03Role of activated chemisorption in gas-mediated electron beam induced depositionBishop, J; Lobo, CJ; Martin, A; Ford, M; Phillips, M; Toth, M
2006-05-16Fe-centers in GaN as candidates for spintronics applicationsMnlguth, E; Hoffmann, A; Phillips, M; Gehlhoff, W
2006-01Probing carrier behaviour at the nanoscale in gallium nitride using low voltage cathodoluminescencePhillips, M; Drouin, D; Pauc, N; Kotula, P; marko, M; Scott, JH; Gauvin, R; Beniac, D; Lucas, G; mcKernan, S; Shields, J
2002-01A review of gas-electron interactions imaging and X-ray analysis in variable pressure SEMGriffin, B; Suvorova, A; Phillips, M; Englebrecht, J; Sewell, T; Witcombe, M
2002-01-01Relationship between sample morphology and carrier diffusion length in gan thin filmsGodlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S
Results 1-10 of 31 (Search time: 0.022 seconds).