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Issue DateTitleAuthor(s)
2006-01Probing Carrier Behavior at the Nanoscale in Gallium Nitride using Low Voltage CathodoluminescencePhillips, M; Drouin, D; Goldys, EM
2003-12-07A method to improve the light emission efficiency of Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM
2019-05-01AIEgen based poly(L-lactic-co-glycolic acid) magnetic nanoparticles to localize cytokine VEGF for early cancer diagnosis and photothermal therapyMa, K; Liu, GJ; Yan, L; Wen, S; Xu, B; Tian, W; Goldys, EM; Liu, G
2004-03-01Dissociation of H-related defect complexes in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
1997-01-01Type I and type II alignment of the light hole band in In<inf>0.15</inf>Ga<inf>0.85</inf>As/GaAs and in In<inf>0.15</inf>Ga<inf>0.85</inf>As/Al<inf>0.15</inf>Ga<inf>0.85</inf>As strained quantum wellsGoldys, EM; Zuo, HY; Phillips, MR; Contessa, CM; Vaughan, MR; Tansley, TL
2012-04-05Taking plasmonic core-shell nanoparticles toward laser thresholdCalander, N; Jin, D; Goldys, EM
2004-01-01In-depth and in-plane profiling of light emission properties of InGaN-based laser diodeGodlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
2002-11-11Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaNGelhausen, O; Klein, HN; Phillips, MR; Goldys, EM
2001-12-01Strain relaxation in GaN<inf>x</inf>P<inf>1-x</inf> alloy: Effect on optical propertiesBuyanova, IA; Chen, WM; Goldys, EM; Phillips, MR; Xin, HP; Tu, CW
2011-06-30Fabrication of metal nanoparticles by laser ablationSobhan, MA; Ams, M; Withford, MJ; Goldys, EM
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