Browsing by Author Böttcher, T

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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
1-Jan-2004Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayersGodlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
1-Jan-2003Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emissionGodlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
29-Feb-2004Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructureGodlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S
1-Jan-2004In-depth and in-plane profiling of light emission properties of InGaN-based laser diodeGodlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
7-Nov-2005Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structuresGodlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
1-Jan-2002Relationship between sample morphology and carrier diffusion length in gan thin filmsGodlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S