Issue Date | Title | Author(s) |
2004-01-01 | Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers | Godlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
2003-01-01 | Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission | Godlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
2004-01-01 | In-depth and in-plane profiling of light emission properties of InGaN-based laser diode | Godlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
2006-05-01 | Profiling of light emission of GaN-based laser diodes with cathodoluminescence | Godlewski, M; Phillips, MR; Kazlauskas, K; Czernecki, R; Targowski, G; Perlin, P; Leszczyński, M; Figge, S; Hommel, D |
2002-01-01 | Relationship between sample morphology and carrier diffusion length in gan thin films | Godlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S |