| Issue Date | Title | Author(s) |
| 2001-06-01 | Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer | Godlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM |
| 2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
| 2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 2007-07-01 | Color tuning of white light emission from thin films of ZnSe | Godlewski, M; Skrobot, M; Guziewicz, E; Phillips, MR |
| 2004-05-18 | Luminescent properties of wide bandgap materials at room temperature | Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A |
| 2009-01-01 | Optical properties of manganese doped wide band gap ZnS and ZnO | Godlewski, M; Wójcik-Głodowska, A; Guziewicz, E; Yatsunenko, S; Zakrzewski, A; Dumont, Y; Chikoidze, E; Phillips, MR |
| 2007-01-01 | Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese | Godlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
| 2002-01-01 | Relationship between sample morphology and carrier diffusion length in gan thin films | Godlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S |
| 2005-11-01 | Growth and characterization of ZnO nanoparticles | Tomaszewska-Grzeda, A; Lojkowski, W; Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR |
| 2004-01-01 | Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers | Godlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
