Showing results 95 to 114 of 171
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| Issue Date | Title | Author(s) |
| 2002-01-21 | Indentation-induced damage in GaN epilayers | Bradby, JE; Kucheyev, SO; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P; Li, G; Phillips, MR |
| 2017-02-17 | Indirect excitons in hydrogen-doped ZnO | Zhu, L; Lem, LLC; Nguyen, TP; Fair, K; Ali, S; Ford, MJ; Phillips, MR; Ton-That, C |
| 2002-11-11 | Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 2006-12-01 | Integration of quantum dot devices by selective area epitaxy | Mokkapati, S; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
| 2018-10-29 | Kinetics of charge carrier recombination in β- Ga2 O3 crystals | Huynh, TT; Lem, LLC; Kuramata, A; Phillips, MR; Ton-That, C |
| 2005-10-01 | Light emission properties of GaN-based laser diode structures | Godlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S |
| 2003-10-20 | Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 2010-12-01 | Luminescence of InGaN MQWs grown on misorientated GaN substrates | Nenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A |
| 2008-03-01 | Luminescence properties of poly- (phenylene vinylene) derivatives | Ton-That, C; Stockton, G; Phillips, MR; Nguyen, TP; Huang, CH; Cojocaru, A |
| 2005-12-01 | A luminescence study of porous diatoms | Butcher, KSA; Ferris, JM; Phillips, MR; Wintrebert-Fouquet, M; Jong Wah, JW; Jovanovic, N; Vyverman, W; Chepurnov, VA |
| 2004-05-18 | Luminescent properties of wide bandgap materials at room temperature | Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A |
| 2008-10-15 | Luminescent properties of ZnO nanowires and as-grown ensembles | Ton-That, C; Foley, M; Phillips, MR |
| 2010-05-31 | Luminescent properties of ZnO structures grown with a vapour transport method | Foley, M; Ton-That, C; Phillips, MR |
| 2010-12-01 | A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation | Manning, TJ; Hardy, T; Merklein, M; Wintrebert-Fouquet, M; Phillips, MR |
| 2004-10-20 | Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds | Godlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR |
| 2007-01-01 | Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese | Godlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
| 2003-12-07 | A method to improve the light emission efficiency of Mg-doped GaN | Gelhausen, O; Phillips, MR; Goldys, EM |
| 2015-07-06 | Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing | Ton-That, C; Zhu, L; Lockrey, MN; Phillips, MR; Cowie, BCC; Tadich, A; Thomsen, L; Khachadorian, S; Schlichting, S; Jankowski, N; Hoffmann, A |
| 2003-04-01 | Monet's painting under the microscope | Dredge, P; Wuhrer, R; Phillips, MR |
